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Publications:

  • M. MÖLLER: Challenges in Cell-Based Design of Very-High-Speed Si-Bipolar IC's at 100 Gb/s, IEEE BIPOLAR/BiCMOS CIRCUITS AND TECHNOLOGY MEETING Boston, Massachusetts, October 1-2, 2007
  • K. SCHUH, B. JUNGINGER, E. LACH , G. VEITH , J. LUTZ , M. MÖLLER: Serial 107Gbit/s ETDM NRZ Transmission over 320km SSMF, OFC 2007, PD paper.
  • K. SCHUH, B. JUNGINGER, E. LACH , G. VEITH , J. LUTZ , M. MÖLLER: Serial 107Gbit/s ETDM NRZ Transmission over 320km SSMF, Journal of Ligthwave Technology, January 2007, Volume 25, Issue 1, p. 122-130.
  • C. SCHUBERT, R. H. DERKSEN, M. MÖLLER, R. LUDWIG, C.-J. WEISKE, J. LUTZ, S. FERBER, C. SCHMIDT-LANGHORST: 107 Gbit/s Transmission using an Integrated ETDM Reveiver, ECOC 2006, PD paper.
  • C. SCHUBERT, R. H. DERKSEN, G. LEHMANN, M. MÖLLER, R. LUDWIG, C.-J. WEISKE, J. LUTZ, S. FERBER, C. SCHMIDT-LANGHORST: Integrated 100 Gbit/s ETDM Reveiver in a Transmission Experiment over 480 km DMF, OFC 2006, PD paper.
  • U. DÜMLER, M. MÖLLER, A. BIELIK, T. ELLERMEYER, H. LANGENHAGEN, W. WALTHES, T. ELLERMEYER, J. MEJRI,: 86 Gbit/s SiGe receiver module with high sensitivity for 160×86 Gbit/s DWDM system, Electronics Letters, 5 January 2006, Volume 42, Issue 1, p. 21-22.
  • M. MÖLLER: Grenzen ausloten: Entwicklung integrierter Hochgeschwindigkeitsschaltungen, 2005 EEEfCOM.
  • M. MÖLLER: Exploring the Limits: Development of Integrated High-Speed Circuits, 2005 ProRISC and SAFE workshop plenary session.
  • W. STEINER, H.-M. REIN, J. MÜLLRICH, A. SCHILD: Reducing Substrate Coupling in 10 to 20 Gbit/s High-Gain Broadband Amplifiers, Proc. ESSCIRC: pp.299-302, 2002.
  • A. SCHILD, H.-M. REIN, J. MÜLLRICH, L. ALTENHAIN, J. BLANK, K. SCHRÖDINGER: Amplifier array for 12 parallel 10 Gb/s optical-fiber links fabricated in a SiGe production technology, IEEE 2002 RFIC Symposium, Seattle, June 2002.
  • T. ELLERMEYER: Monolithically integrated eye-opening analyzators for high-capacity fibre optic transmission systems (in German), PhD thesis, Ruhr-University Bochum, 2002.
  • E.A.M. KLUMPERINK, R. KREIENKAMP, T. ELLERMEYER, U. LANGMANN: Transmission Lines in CMOS: An Explorative Study, 12th Annual Workshop on Circuits, Systems and Signal Processing, Veldhoven, The Netherlands, 2001.
  • T. ELLERMEYER, U. LANGMANN, B. WEDDING, W. PÖHLMANN: A 10-Gb/s Eye-Opening Monitor IC for Decision Guided Adaptation of the Frequency Response of an Optical Receiver, IEEE Journal of Solid-State Circuits, 35(12): pp. 1958-1963, 2000.
  • J. MÜLLRICH, H. THURNER, E. MÜLLNER, J. F. JENSEN, W. E. STANCHINA, M. KARDOS, H.-M. REIN: High-gain transimpedance amplifier in InP-based HBT technology for the receiver in 40-Gb/s optical-fiber TDM links, IEEE Journal of Solid-State Circuits, 35(9): pp. 1260-1265, 2000.
  • R. SCHMID: Monolithically Integrated Driver Circuits in Si-Bipolar Technology for the Modulation of Lightwave Power in Optical-Fibre Systems with Highest Data Rates (in German), PhD thesis, Arbeitsgruppe Halbleiterbauelemente, Ruhr-University Bochum, 2000.
  • T. ELLERMEYER, U. LANGMANN, B. WEDDING, W. PÖHLMANN: A 10-Gb/s Eye-Opening Monitor IC for Decision Guided Adaptation of the Frequency Response of an Optical Receiver, International Solid-State Circuits Conference (ISSCC): pp. 50-51, 2000.
  • W. BOGNER, E. MÜLLNER, F. ZNIDARIC, M. MÖLLER, H.-M. REIN, C.J. WEISKE, E. GOTTWALD: A 40 Gb/s SiGe bipolar chipset for terabit optical networks, IEE Seminar on High performance semiconductor devices and circuits for communications, London, 2000.
  • R. SCHMID, T. F. MEISTER, M. REST, H.-M. REIN: SiGe Driver Circuit with High Output Amplitude Operating up to 23 Gb/s, IEEE Journal Solid-State Circuits, 35(11): pp. 886-891, 1999.
  • J. MÜLLRICH, E. MÜLLNER, J. F. JENSEN, B. STANCHINA, M. KARDOS, H. THURNER, H.-M. REIN: High-gain transimpedance amplifier in InP-based HBT technology for the receiver in 40 Gb/s optical-fiber TDM links, Proc. GaAs IC Symposium: pp. 99-102, Monterey, USA, October 1999.
  • J. MÜLLRICH, W. KLEIN, R. KHLIFI, H.-M. REIN: A SiGe regenerative frequency divider operating up to 63 GHz, Electronics Letters, 35(20): pp. 1730-1731, 1999.
  • M. MÖLLER, H.-M. REIN, E. GOTTWALD, T.F. MEISTER: SiGe Bipolar ICs with data rates from 40 to 60 Gb/s for future Fiber-Optic Systems, GAAS 99, 1999.
  • R. SCHMID, T. F. MEISTER, M. REST, H.-M. REIN: 23 Gbit/s SiGe Modulator Driver with 3.5 V Single-Ended Output Swing --Design Aspects and Measuring Results, INTERNATIONAL IEE MTT/AP WORKSHOP ON MMIC DESIGN, PACKAGING, AND SYSTEM APPLICATIONS: pp. 87-88, 1998.
  • M. MÖLLER: Design and optimization of monolithically integrated broadband amplifiers in Si-bipolar technology for optical transmission systems (in german), PhD thesis, Arbeitsgruppe Halbleiterbauelemente, Ruhr-University Bochum, 1998.
  • R. SCHMID, T. F. MEISTER, M. REST H.-M. REIN: 40 Gbit/s EAM driver IC in SiGe bipolar technology, Electronics Letters, 34(11): pp. 1095-1097, 1998.
  • J. MÜLLRICH, T. F. MEISTER, M. REST, W. BOGNER, A. SCHÖPFLIN, H.-M. REIN: 40 Gbit/s transimpedance amplifier in SiGe bipolar technology for the receiver in optical fibre TDM links, Electronics Letters, 34(5): pp. 452-453, 1998.
  • 13. R. SCHMID, T. F. MEISTER, M. NEUHÄUSER, A. FELDER, W. BOGNER, M. REST, J. RUPETER, H.-M. REIN: 20 Gbit/s Transimpedance Amplifier and Modulator Driver in SiGe Bipolar Technology, Electronics Letters, 33(13): pp. 1136-1137, 1997.
  • M. NEUHÄUSER, H. ZOJER, C. RAPPEL, F. FILIPIAK: Considerations about Gaintracking and EMI in a VLSI Mixed Signal BiCMOS Design - A Case Study, Proc. ESSCIRC '96, Neuchatel, Switzerland, September 1996.
  • M. NEUHÄUSER, H. ZOJER, C. RAPPEL, F. FILIPIAK: Considerations about Gaintracking and EMI in a VLSI Mixed Signal BiCMOS Design - A Case Study, Proc. ESSCIRC '96, Neuchatel, Switzerland, September 1996.
  • E. GOTTWALD, A. FELDER, H.-M. REIN, M. MÖLLER, M. WURZER, B. STEGMÜLLER, M. PLIHAL, J. BAUER, F. AURACHER, W. ZIRWAS, U. GAUBATZ, A. EBBERG, K. DRÖGEMÜLLER, C. WEISKE, G. FISCHER, W. BOGNER P. KRUMMRICH, U. FISCHER: Towards a 40 Gbit/s electrical time division multiplexed optical transmission system, Proc. ICCT '96, pp. 60-63, Beijing, China, 1996.
  • M. WURZER, T.F. MEISTER, H. SCHÄFER, H. KNAPP, J. BÖCK, R. STENGL, K. AUFINGER, M. FRANOSCH, M. REST, M. MÖLLER, H.-M. REIN, A. FELDER: 42 GHz Static Frequency Divider in a Si/SiGe Bipolar Technology, ISSCC, p. 86,87,122,123, 1997.
  • A. FELDER, M. MÖLLER, J. POPP, J. BÖCK, H.-M. REIN: 46 Gb/s DEMUX, 50 Gb/s MUX, and 30 GHz Static Frequency Divider in Silicon Bipolar Technology, IEEE J. Solid-State Circuits, 31(4): pp. 481-486, 1996.
  • H.-M. REIN, M. MÖLLER: Design considerations of 10 to 50 Gb/s digital and analog Si-bipolar ICs, IEEE J. Solid-State Circuits, 31(8): pp. 1076-1090, 1996.
  • TREITINGER, MEISTER, FELDER, BÖCK, MOLZER, AUFINGER, KÖPL, SCHREITER, POPP, BOGUTH, OHNEMUS, REST, SCHUMANN, SIMBÜRGER, KNAPP, WURZER, WEGER, REIN, MÖLLER, MELCHIOR, WIELAND: High-Speed Switching Electronics and Interconnects in silicon and Si/SiGe Bipolar Technologies: Status and Perspectives, Proc. 21st Eur. Conf. on Opt. Comm. (ECOC'95), Ti.A.2.2: p. 189, cont. in Vol III, 1995.
  • M. MÖLLER, H.-M. REIN, A. FELDER, J. POPP J. BÖCK: 50 Gb/s time-division multiplexer in Si-bipolar technology, Electronics Lett., 31: pp. 1431-1433, 1995.
  • A. FELDER, M. MÖLLER, J. POPP, J. BÖCK, M. REST, H.-M. REIN, L. TREITINGER: 30 GHz static 2:1 frequency divider and 46 Gb/s multiplexer/demultiplexer ICs in a 0.6 um Si bipolar technology, Proc. Symp. on VLSI Circuits, pp. 117-118, Kyoto, 1995.
  • M. NEUHÄUSER, M. MÖLLER, H.-M. REIN H. WERNZ: Low-noise, high-transimpedance Si-bipolar AGC amplifier for 10 Gb/s optical-fiber links, Photonics Technology Lett., 7: pp. 549-551, 1995.
  • M. MÖLLER, H.-M. REIN, H. WERNZ: 13 Gb/s Si-bipolar AGC amplifier with high gain and wide dynamic range for optical-fiber receivers, IEEE J. Solid-State Circuits, 29(7): pp. 815-822, 1994.
  • H.-M. REIN, R. SCHMID, P. WEGER, T. SMITH, T. HERZOG R. LACHNER: A versatile Si-bipolar driver circuit with high output voltage swing for external and direct modulation of laser diodes in 10 Gb/s optical-fiber links, IEEE Journal Solid-State Circuits, 29: pp. 1014-1021, 1994.
  • M. MÖLLER, H.-M. REIN, H. WERNZ: 15 Gb/s high-gain limiting amplifier fabricated in a Si-bipolar production technology, IEE Electronics Lett., 30(18): pp. 1519-1520, 1994.